dc.contributor.author | Mtangi, Wilfred | |
dc.contributor.author | Auriet, F.D. | |
dc.contributor.author | Diale, M. | |
dc.contributor.author | Chawanda, Albert | |
dc.contributor.author | Meyer, de H | |
dc.contributor.author | Rensburg, P.J Janse | |
dc.contributor.author | Nel, J. M. | |
dc.date.accessioned | 2014-09-01T10:13:53Z | |
dc.date.available | 2014-09-01T10:13:53Z | |
dc.date.issued | 2012 | |
dc.identifier.uri | http://hdl.handle.net/11408/418 | |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.relation.ispartofseries | Journal of Applied Physics; Vol.3 | |
dc.subject | High temperature annealing | en_US |
dc.title | Effects of high temperature annealing on single crystal ZnO and ZnO devices | en_US |
dc.type | Article | en_US |