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Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

Mtangi, W.; Auret, F.D.; Chawanda, Albert; Janse van Rensburg, P.J.; Coelho, S.M.M.; Nel, J.M.; Diale, M.; van Schalkwyk, L. (Elsevier, 2012)
Comparison of metal Schottky contacts on n-Ge (100) at different annealing temperatures

Chawanda, Albert; Nyamhere, Cloud; Auret, F. D; Mtangi, W.; Diale, M.; Nel, J. M. (Wiley, 2010)
Analysis of Current Voltage measurements on Au/Ni/n-GaN Schottky contacts in a Wide Temperature Range

Mtangi, W.; Janse. van Rensburg, P. J.; Diale, M.; Auret, F. D.; Nyamhere, Cloud; Nel, J. M.; Chawanda, Albert (Elsevier, 2010)
Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

Mtangi, W.; Nel, J.M.; Auret, F.D.; Chawanda, Albert; Diale, M.; Nyamhere, C. (Elsevier, 2012)
Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (1 0 0)

Chawanda, Albert; Nyamhere, C.; Auret, F. D.; Mtangi, W.; Diale, M.; Nel, J. M. (Elsevier, 2010)
A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals

Mtangi, W.; Schmidt, M.; Auret, F. D.; Meyer, W. E.; Janse van Rensburg, P. J.; Diale, M.; Nel, J. M.; Das, A. G. M.; Das, A. G. M.; Ling, F. C. C.; Chawanda, Albert (American Institute of Physics, 2013)
Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

Chawanda, Albert; Coelho, S.M.M.; Aureta, F.D.; Mtangi, W.; Nyamhere, C.; Nela, J.M.; Diale, M. (Elsevier, 2012-02)
Correlation between barrier heights and ideality factors of Ni/n-Ge (100) schottky barrier diodes

Chawanda, Albert; Nel, J. M.; Auret, F. D.; Mtangi, W.; Nyamhere, C.; Diale, M.; Leach, L. (Korean Physical Society, 2010)

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